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 MMBD101
Features
Low Turn-on Voltage ForUHFmixerapplication Also suitablefor use in detector and ultra-fast switching circuitsLow NoiseFigure- 6.0dBTyp@1.0GHz Very Low Capacitance-LessThan1.0pF@0V HighForwardConductance-0.5V(Typ) @ IF= 10mA
V
Surface Mount Schottky Barrier Diode
A
L 2 BS
1
3 To p View G
Mechanical Data
Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.008 grams (approx.) Mounting Position: Any
1 2
C D 3 H K J
3 CATHODE
1 ANODE
SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm
MAXIMUM RATINGS
MMBD101 Rating Reverse Voltage Forward Power Dissipation @ TA = 25oC Derate above 25oC Junction Temperature Storage Temperature Range DEVICE MARKING MMBD101 = 4M ELECTRICAL CHARACTERISTICS Reverse Breakdown Voltage (IR = 10 Ad c) Diode Capacitance (VR = 0, f = 1.0 MH ) z Forward Voltage (IF = 10 mAdc) Reverse Leakage (VR = 3.0 Vdc) (TA = 25oCunless otherwise noted) Symbol V(BR)R CT VF IR Min 7.0 Typ 10 0.88 0.5 0.02 1.0 0.6 0.25 Max Unit Volts pF Volts Adc Symbol VR PF TJ Value 7.0 225 1.8 +150 -55 to +150 Unit Volts mW mW/ C
o o o
C
Tstg
C
Characteristic
RATINGS AND CHARACTERISTIC CURVES MMBD101
Figure 1. Reverse Leakage
1.0 0.7 I R , R verse Lea kage ( A) 0.5 0.2 0.1 0.07 0.05 0.02 0.01 30 40 50 60 70 80 90 100 T A , Amb ien t Tem per ature ( OC) 110 120 130 0.1 0.3 0.4 0.5 0.6 V F, Forward Voltage (V ) 0.7 V R = 3.0 Vdc 100 T A = 85 oC 10
o T A = C0
Figure 2. Forward Voltage
I F , Forwa rd C urren t (mA)
1.0
T A = 25 oC
Figure 3. Capacitance
1.0 11 10 0.9 N F, N oise Figure (dB) C, C apacitance (pF) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 0.6 0 1.0 2.0 V R , R everse Voltage (V ) 3.0 4.0 1.0
Figure 4. Noise Figure
Local Oscillator Frequency = 1.0 GHz
0.8
0.7
0.1
0.2
0.5
1.0
2.0
PLO, Local Oscillator Power (mW)
5.0
10


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